Trench Termination Design and Analysis in Low-Voltage N-Channel Trench Power Metal–Oxide–Semiconductor Field-Effect Transistor

Abstract

In this study, a novel termination is designed in a low-voltage N-channel trench power metal–oxide–semiconductor field-effect transistor (MOSFET) to simplify the fabricating process. In a conventional trench power-MOSFET (PowerMOS), a field oxide with a metal field plate is often used for edge termination. The field oxide only exists in the termination region of the trench PowerMOS; therefore if the termination can be designed without the field oxide, field oxidation can be removed from the fabrication. Trench termination is proposed in this work to replace field oxide termination. The use of multiple trench rings leads to the desired breakdown voltage. The temperature effect in trench termination must be considered owing to the negative coefficient of the threshold voltage (VTH) of the P-type MOS (PMOS) and the temperature. This work also provides a design guideline for trench termination in the low-voltage trench PowerMOS.