Abstract
A novel trench shielded planar gate IGBT (TSPG-IGBT) with self-biased pMOS is proposed in this paper. It features a P-layer beneath the trench of the TSPG-IGBT to form a self-biased pMOS, which provides an additional path for the hole current and clamps the potential of the nMOS's intrinsic drain for lower saturation current. In the off-state, with the increasing potential of the N-cs (N-doped carrier store layer), the self-biased pMOS turns on and the potential of the P-layer will be clamped by the hole channel. Then, the reverse voltage is sustained by the P-layer/N-drift junction and the potential of the N-cs is shielded by the clamped P-layer region. Therefore, the N-cs can be heavily doped to reduce the on-state voltage (Von) without decreasing the breakdown voltage. Compared with the conventional TSPGIGBT, the Von of the proposed TSPG-IGBT is reduced by 0.3 V at the current density of 200 A/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with the same turn-off loss. Besides, the saturation current density of the proposed one is decreased by 24%.
Highlights
The insulated gate bipolar transistor (IGBT) is widely used in power electronics
The on-state voltage is reduced by reducing the channel length and increasing the doping concentration of N-cs, and the saturation current density is adjusted by designing different threshold voltage of the pMOS (VthP)
With Nncs increasing from 1 × 1016cm−3 to 3 × 1017 cm−3, the on-state voltage decreases from 1.56 V to 1.42 V, but its breakdown voltage reduces dramatically from 742 V to 40 V
Summary
The insulated gate bipolar transistor (IGBT) is widely used in power electronics. The compromise among on-state voltage (Von), turning-off loss (Eoff) and short circuit safe operating area (SCSOA) is the key issue need to be considered in the design of IGBTs. In [15], [16], clamping the potential of nMOS’s intrinsic drain with self-biased pMOS allows a further increasing Nncs and decreases the saturation current density, as the Dncs doesn’t need to be completely depleted when sustaining high voltage.
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