Abstract
A low on-state voltage with fast turnoff speed named CSFP (Carrier Stored Floating P-region)-RC (Reverse Conducting) IGBT is proposed in this paper. By sandwich an n layer between the p-well and n-drift as a CS (Carrier Stored) layer, the carrier concentration at the top of the drift is tremendously increased, to make the entire device doping concentration curve into the ideal PIN diode one. The on-state voltage is then sharply decreased. Because the bottom structure is not changed, the turnoff time is still the same as the conventional FP (Floating P-region)-RC-IGBT. With low on-state voltage and fast turnoff speed, shown in the simulation, an impressive energy saving CSFP-RC-IGBT was obtained.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
