Abstract
In this paper, a novel thin silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed and investigated by numerical simulation. In such a device, several trench gates and an N-buried layer under the P-base are employed to form multiple trench NMOS, which increases the effective channel width. Consequently, the on-state voltage (Von) is reduced, and the saturation current is distinctly enhanced. Moreover, because the N-buried layer can be pinched off in the blocking state, the proposed device exhibits an approximate breakdown voltage (BV) with the conventional one. The simulation results demonstrate that the saturation current and the Von of the proposed device are increased by 316.5% and decreased by 21.7%, respectively. Additionally, an excellent tradeoff between the Von and the turn-off energy loss (E off ) is achieved.
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