Abstract
A new TIGBT (Trench Insulated Gate Bipolar Transistor) with a trench cathode is proposed to suppress the latch-up which is a key problem to limit the maximum operating current. The efficiency of the proposed device is verified by numerical analysis with MEDICI. Trench cathode TIGBT could suppress the latch-up at anode voltage of 300 V and current density of 19 000 A/cm2 while planar IGBT and conventional TIGBT latch at the anode current density of 1300 and 4200 A/cm2, respectively. Forward voltage drops of trench cathode TIGBT, conventional TIGBT and planar IGBT are 1.53 V, 1.48 V and 2.43 V, respectively. In addition, trench cathode TIGBT has very large FBSOA (Forward Biased Safe Operating Area) compared with that of conventional TIGBT and planar IGBT.
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