Abstract
A physically-based analytical model for the on-state carrier dynamics in Trench Insulated Gate Bipolar Transistors (TIGBT) is proposed. The model accounts for the enhanced carrier modulation in the drift base due to the PIN diode effect. The on-state phenomena in the TIGBT are accurately described using numerical simulations and analytical modeling. The PIN diode effect has a very important role in reducing the on-state forward voltage with virtually no compromise in the turn-off performance. It is concluded that the TIGBT is the most promising power structure in the area of high voltage or/and fast switching devices.
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