Abstract
A steady-state, physically-based analytical model for the trench Insulated Gate Bipolar Transistor (IGBT) which accounts for a combined PIN diode-PNP transistor carrier dynamics is proposed. Previous models (i.e. PIN model and PNP transistor model) cannot account properly for the carrier dynamics in trench IGBT since neither the PNP transistor nor the PIN diode effect can be neglected. An optimised trench IGBT with a large ratio between the accumulation layer and the cell size leads to substantially improved on-state characteristics, which makes the trench IGBT potentially the most attractive device in the area of high voltage fast switching devices.
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