Abstract
A trench insulated gate bipolar transistor (TIGBT) with emitter-embedded gate is proposed. The emitter-embedded gate could increase the gate-to-emitter capacitance C GE without affecting the miller capacitance C GC. Therefore, the ratio of C GC to C GE is significantly reduced, which suppresses the gate self-charging effect effectively. As a result, an excellent controllability on the turn-on dI CE/dt of the TIGBT and the dV KA/dt of the free-wheeling diode (FWD) is obtained. The simulation results based on a 1.2 kV TIGBT show that, in comparison with the conventional TIGBT, the lower limit of the reverse-recovery dV KA/dt of the FWD can be reduced by 91.2% and the turn-on loss could be reduced by 53.1% under the same dV KA/dt.
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