Abstract
The authors report on fabrication and measurement of traveling-wave photomixers based on high energy and low dose nitrogen-ion-implanted GaAs. They used 3MeV energy to implant N+ ions into GaAs substrates with an ion concentration dose of 3×1012cm−2. The N+-implanted GaAs photomixers exhibit improvements in the output power in comparison with their counterparts, photomixers fabricated on low-temperature-grown GaAs. The maximal output power was 2.64μW at 850GHz. No saturation of the output power with increased bias voltage and optical input power was observed. These characteristics make N+-implanted GaAs the material of choice for efficient high power sources of terahertz radiation.
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