Abstract
The authors have fabricated and characterized photomixers based on high energy nitrogen-ion-implanted GaAs. For material optimization and annealing dynamics in MSM photodetector structures, 400 keV implantation energy was used with an ion dose of 1times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">16</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2 </sup> . For photomixer structures, 3 Me V energy was used to implant N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> ions into GaAs substrates, with an ion concentration dose of 3times10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">12</sup> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-2</sup> . The N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -implanted GaAs photomixers exhibit improved output power in comparison to their counterparts, photomixers fabricated on low-temperature-grown GaAs. The highest output power was 2.6 muW at 850 GHz and about 1 muW at 1 THz. No saturation of the output power with increased bias voltage and optical input power was observed. These characteristics make N <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+ </sup> -implanted GaAs the material of choice for efficient high power sources of terahertz radiation
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