Traveling solvent growth of ZnSe 1− xTe x and Be yZn 1− ySe 1− xTe x using tellurium solution

Abstract

ZnSe 1− x Te x and Be y Zn 1− y Se 1− x Te x bulk crystals were grown using the traveling solvent method (TSM) with tellurium solution. Ternary bulk crystals of ZnSe 1− x Te x contained tellurium from 1.2 to 3.6 at% (0.025< x<0.072). Quaternary bulk crystals of Be y Zn 1− y Se 1− x Te x contained tellurium from 1.8 to 7.8 at% and beryllium from 0.02 to 6.9 at% (0.03< x<0.16, 0.0004< y<0.14). The tellurium effective segregation coefficient was obtained as k Te=0.6±0.4 and the beryllium effective segregation coefficient was k Be=1.7±0.5. In the ZnSeTe crystals, the best etch-pit density was 9.0×10 5/cm 2 and the best full-width at half-maximum of the X-ray rocking curve was 50 arcsec. In the BeZnSeTe crystals, the best etch-pit density was 3.0×10 5/cm 2 and the best full-width at half-maximum of the X-ray rocking curve was 33 arcsec. The Vickers hardness increased up to 4300 N/mm 2 in a beryllium concentration of 5 at%.