Abstract
Large single crystals of AlSb with a diameter up to 5 cm were grown from the melt in Al 2O 3 or vitreous carbon crucibles. A method for removing the oxide film, which usually floats on the surface of the melt and prevents the growth of single crystals, is described. The perfection of both pure and doped crystals is investigated through chemical etching. The dopants used were Se, Te, Mn, Yb, Pr and particularly In. Their effective segregation coefficients were determined by chemical analysis. The etch pit density was lower at the top than at the bottom of the as-grown crystals and could be reduced at the top by a factor of 10 through doping with In. Hall measurements revealed p-type conductivity for undoped and In, Mn or Pr doped crystals, and n-type conductivity for Te or Se doped crystals at high concentrations.
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