Abstract
We have investigated the generation and migration of defects in crystalline Si following their introduction at room temperature by low-energy hydrogen ions in a region confined to the near-surface region. The fluence dependence of free carrier compensation and creation of electrically active defects in the n-type samples was monitored by capacitance–voltage and deep level transient spectroscopy measurements, respectively. The defects were responsible for free carrier compensation to depths exceeding ∼1 μm beyond the top ∼0.25 μm region of samples where they were generated. We describe a close relationship between generation of the VO–H complex and the VP pair on the free carrier compensation.
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