Abstract
Proton irradiation (80 keV) effect on the electrical properties of Au/n-GaAs Schottky barrier diodes (SBDs), fabricated on an epitaxially grown undoped n-GaAs has been studied for a range of particle fluences from 1×10 13 to 1×10 15 particles/cm 2. Current–voltage ( I–V), capacitance–voltage ( C–V) and deep level transient spectroscopy (DLTS) measurements have been carried out to study the change in characteristics of the devices and the defects introduction due to implantations, respectively. Reverse leakage current ( I R) of the device is the most sensitive parameter to the incident proton irradiation. The I R was increased (1.0×10 −9 to 7.95×10 −5 A) upon irradiation and it strongly depends on the particle fluence. Annealing of irradiated diodes shows reduction in the I R and particularly, enhancement in barrier heights of the diodes. A change of effective free carrier concentration in the material has been observed from the C–V measurements for the irradiated diodes when compared to the unirradiated diode. From DLTS measurements, it was found that the low energy proton irradiation of the SBDs increases the concentration of EL2 defects and the concentration was estimated to be 6.42×10 14 cm −3.
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