Abstract
The effect of electron irradiation on n-type Cz- and oxygen-doped FZ-Si containing oxygen-related thermal donors (OTDs) due to a plasma hydrogenation and a subsequent thermal donor formation step at 450°C is investigated by capacitance–voltage (C–V) and deep level transient spectroscopy (DLTS) measurements. In order to explain the electron irradiation induced reduction of the carrier concentration, DLTS measurements were performed. They revealed the presence of thermal donors (TDs) and radiation-induced complexes. It is shown that the peak at EC−0.09eV related to OTDs in CZ-Si diode is not changed by the electron irradiation.
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