Abstract
The defect states of an electron-beam irradiated GaN epilayer were characterized by capacitance–voltage (C–V) and deep-level transient spectroscopy (DLTS) measurements. The electron irradiation was performed using 1 and 2 MeV energy beams with 1 ×1015 and 1 ×1016 cm-2 doses, respectively. The depth penetrated in the GaN epilayer by 1 MeV electrons appeared to be about 450 to 600 nm from the C–V measurement. Five defect states with activation energies of 0.34, 0.49, and 0.65 eV including two broad signals were observed by DLTS measurements, and it was suggested that they might originate from crystal damage during high-energy electron irradiation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
