Abstract
The temperature dependent Hall mobility and carrier concentration of In0.5Ga0.5P epilayers grown on (100) semi-insulating GaAs substrates by the liquid phase epitaxy technique have been investigated in the range of 77–300 K. The electron mobility and carrier concentration were of the order of 806 cm2 V−1 s−1, and 6.5×1016 cm−3, respectively at 300 K. The model (taking into account ionized impurity, alloy and space-charge scattering mechanisms) is considered in order to properly portray the observed features of the electron mobility results. The theoretical prediction is in good agreement with the observed results. The electron mobility was limited by ionized scattering up to 120 K and was also limited by alloy, space-charge scattering up to 300 K. It was found that the space-charge scattering has a stronger temperature dependence, T−1, than the usual T−0.5 and the In0.5Ga0.5P epilayer was heavily compensated for having an acceptor concentration of NA=8.5×1016 cm−3 with a compensation ratio of 0.5.
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