Abstract
Zn-doped In 0.5Ga 0.5P epilayers grown on semi-insulating (1 0 0) GaAs substrates by liquid phase epitaxy (LPE) technique have been investigated using photoluminescence (PL) measurements from 17 K to 300 K. Transitions involving acceptors are identified and the ionization energy of Zn ranges from 45 meV to 31 meV as the concentration is increased from 1.5 × 10 17 to 3.4 × 10 19 cm −3 at 17 K. The Zn related band shifts towards higher energy with increasing hole concentration such that the quasi-Fermi energy level moves towards a higher energy with the impurity band merging with the valence band accompanied by a decrease in the ionization energy of Zn. The calculated quasi-Fermi energy levels are in good agreement with the maxima of the observed PL peaks.
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