Abstract
Ferromagnetic Ga 1− x Mn x As epilayers with Mn mole fraction in the range of x≈0.2–9.6% were grown successfully on semi-insulating (1 0 0) GaAs substrates using the liquid phase epitaxy technique. The ferromagnetic properties of these epilayers were investigated using superconducting quantum interference device at 5 K. The Curie temperature was determined to be 80 K. All the Ga 1− x Mn x As layers had p-type conductivity through Hall effect measurements. The measured hole concentration of Ga 1− x Mn x As layers decreases from 2.0×10 17 cm −3 to 9.8×10 15 cm −3 with increasing Mn mole fraction in the range of x≈0.2–9.6%. Cross-sectional selected area diffraction pattern of the GaMnAs films obtained through transmission electron microscopy measurement showed that the grown GaMnAs layer can be classified as a single crystal. Transitions involving shallow Mn acceptors were identified through photoluminescence measurements and the ionization energy of Mn acceptor was determined to be 104.6 meV.
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