Abstract
We present a detailed study of the electronic transport parameters in amorphous silicon based single junction solar cells. Employing the time-of-flight technique we determine the drift mobility and mobility-lifetime product for electrons and holes, as well as the electric field profile in optimized devices having conversion efficiencies between 10% and 12%. We have also studied the trends in these parameters due to alterations in the device design and material. Here we discuss the importance of buffer layers, and the changes induced by light-soaking. Finally, we discuss our results with respect to future improvements in the conversion efficiency.
Published Version
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