Transparent organic thin film transistors with WO3/Ag/WO3 source-drain electrodes fabricated by thermal evaporation

Abstract

High-performance transparent organic thin film transistors using a WO3/Ag/WO3 (WAW) multilayer as the source and drain electrodes have been developed without breaking the vacuum. The WAW electrodes were deposited by thermal evaporation at room temperature, leading to little damage to organic film. The optimized WAW electrode shows high transmittance (86.57%), low sheet resistance (11 Ω/sq), and a high work function (5.0 eV). Consequently, we obtained high performance devices with mobility of 8.44 × 10−2 cm2/V · s, an on/off ratio of approximately 1.2 × 106, and an average visible range transmittance of 81.5%.