Abstract
Fully transparent organic field effect transistors (OFET) in top- and bottom-gate layouts were prepared. Poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) was structured photolithographically as either gate- or source- and drain-contact on top of poly(4-vinylphenol) (PVP). The dielectric material was fitted to the sequence of materials by combining water soluble polyvinyl alcohol (PVA) and PVP. N-type conducting hexadecafluorophthalocyaninato-copper (F16PcCu) was used as organic semiconductor sensitive to interface traps. Critical boundary surfaces for film growth were examined by microscopic methods, which revealed smooth polymer surfaces as a result of our preparation and lithography steps characterizing the presented concept as a viable alternative to existing approaches.
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