Fabrication of Transparent and Flexible Organic Field-Effect Transistors with Solution-Processed Graphene Source–Drain and Gate Electrodes

Abstract

Transparent organic field-effect transistors with solution-processed graphene source–drain and gate electrodes were fabricated on flexible substrates. Graphene electrodes were formulated by chemical and thermal reduction of solution-processed graphene oxide films. A graphene gate electrode, a gate dielectric layer, and an organic active layer were coated on a transparent flexible polyimide film. Next, graphene source–drain electrodes, which had been formed on another glass substrate, were peeled off and transferred onto the active layer using a thermal release tape. The transparent and flexible poly(3-hexylthiophene) transistor with graphene electrodes showed p-type characteristics with hole mobility of 2.3×10-2 cm2·V-1·s-1.