Abstract
The electrical and optical properties of thin films of the highly doped oxides of In and Sn are investigated. Maximum free electron densities of 15 × 10 20 cm −3 in In 2O 3 and 7 × 10 20 cm −3 in SnO 2 are obtained in films prepared by the hot spray technique by appropriate doping. Free electron density and mobility are strongly influenced by additional oxygen. The free electron mobility is limited mainly by ionized impurity scattering. Optimized filters are designed for solar collector and window applications, taking into account a modified Drude behaviour.
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