Abstract
The mechanisms of ultrafast laser-induced free electron generation and the effect of the free electrons on the transient optical properties in indium tin oxide is investigated by means of numerically solving rate equations and ultrafast transient experiments. A dynamical model for the transient optical properties of indium tin oxide thin films during excitation with an ultrashort laser pulse with fluences between 0.4 J cm−2 to 2.3 J cm−2 is developed and compared to pump probe microscopy during and after excitation with laser pulses. In the non-excited case, thin film interferences dominate the shape of the reflection spectrum. During laser excitation, (quasi-)free electron dynamics drastically alter the optical properties. The temporal evolution of the (quasi-)free electron density is numerically computed using rate equations for irradiation with laser pulses with various peak fluences for a pulse duration of 700 fs and a central wavelength of 1056 nm. We found that a thermal ionization term that takes electronic states within the band gap into account has to be considered to reproduce the reflectivities obtained by pump probe measurements. Additionally, we found that cascade ionization dominates the multiphoton ionization for indium tin oxide.
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