Abstract

It has been proved that the optical and electrical properties of indium tin oxide (ITO) thin film is strongly structural dependent, with the structural properties of the film varies for different film preparation condition. The ITO film has been prepared by RF sputtering and its transmission and conductivity have been optimized by annealing in the atmosphere of N2 at 400°C. A theoretical model based on the variation of electrical and optical band gap of the film for different preparation condition is developed and its validity has been verified by experimental results.

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