Abstract
Transparent conductive Ga-doped MgxZn1−xO (GMZO) films were deposited on sapphire at room temperature using radio-frequency magnetron sputtering with different RF powers. The thickness of all films was controlled at 300nm, and the lowest resistivity was obtained at an RF power of 50W. This study investigates the influence of the post-annealing process on the structural, electrical, and optical properties of the films using X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), Hall measurement, optical transmission spectroscopy, photoluminescence (PL) spectra, and X-ray photoelectron spectroscopy (XPS) spectra. The XRD (002) peak intensity and the spectral linewidth enhanced monotonically as the annealing temperature rose to 700°C, indicating improved crystallinity in the GMZO thin films. A low thin film resistivity (ρ) of 5.69×10−4Ωcm was obtained, along with electron mobility (μ) and carrier concentrations (n) of 28.5cm2/Vs and 3.85×1020cm−3, respectively. XPS measurements were conducted to investigate the mechanism of the reduced thin-film resistivity after high-temperature annealing. The increased density of oxygen vacancies could contribute to the reduced resistivity after high-temperature annealing. Meanwhile, a high optical transmittance of over 96.6% was demonstrated in a wavelength range between 350 and 1100nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
