Abstract
Antimony-doped tin oxide (SnO 2:Sb) single crystalline films have been prepared on α-Al 2O 3 (0001) substrates by the metalorganic chemical vapor deposition (MOCVD) method. The antimony doping was varied from 0 to 7% (atomic ratio). The structural, electrical and optical properties of the films were investigated in detail. The prepared samples were epitaxial single crystalline films with the rutile structure of pure SnO 2. Film with resistivity of 9.1 × 10 − 4 Ω cm, carrier concentration of 5.33 × 10 20 cm − 3 and Hall mobility of 12.73 cm 2 v − 1 s − 1 was obtained at 5% of Sb concentration. The average transmittance for the SnO 2:Sb films in the visible range was over 90%.
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