Abstract
Epitaxial SnO2 films were deposited on MgF2 (110) substrates at different substrate temperatures by the metal organic chemical vapor deposition (MOCVD) method. The structural, optical and electrical properties as well as elementary composition were studied in detail. The obtained films were all rutile phase SnO2 grown along the [110] direction. The SnO2 film prepared at 660°C was single crystalline epitaxial film. The epitaxial relationships were clearly determined as SnO2 (110) || MgF2 (110) with SnO2 [001] || MgF2 [001]. The Hall mobility of the 660°C-deposited film was 21cm2V−1s−1 with a carrier concentration of 3.9 × 1017cm−3. The average transmittance of the 660°C-deposited film in the visible range is 93% and the optical band gap is estimated as 3.89eV.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
