Abstract
The application of transparent conducting indium-tin-oxide (ITO) film as full front electrode replacing the conventional bus-bar metal electrode in III–V compound GaInP solar cell was proposed. A high-quality, non-rectifying contact between ITO and 10 nm -GaAs contact layer was formed, which is benefiting from a high carrier concentration of the terrilium-doped -GaAs layer, up to 2 . A good device performance of the GaInP solar cell with the ITO electrode was observed. This result indicates a great potential of transparent conducting films in the future fabrication of larger area flexible III–V solar cell.
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