Abstract
The crystal structure, light transmittance, and contact resistivity of transparent conducting indium‐tin‐oxide (ITO) films for a III–V solar cell are studied. The optical transparency of ITO can reach 96% under appropriate annealing conditions. ITO and n+‐GaAs can form Ohmic contacts having a lower contact resistance than those formed with ITO and n+‐GaInP. A specially designed solar cell structure is fabricated to grow the ITO film as the front electrode and thus prevent oxidation of the AlInP window layer. Three different GaInP solar cells with pure ITO and ITO/metal grid electrode structures are designed and compared. The results indicate that the ITO electrode has good carrier‐collection ability. After irradiation with 1 MeV energy electrons with an electron fluence of 1 × 1015 e cm−2, the remaining factor of the GaInP solar cells with a pure ITO electrode is ≈98%. The results indicate that ITO films have significant application potential in space solar cell manufacturing.
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