Abstract
InAs quantum wires have been naturally formed on vicinal GaAs(110) surfaces with giant steps by molecular beam epitaxy. Transmission electron microscope observations reveal the high density of stacking faults and the moire fringe for thick wires (>4 ML) due to the large InAs–GaAs lattice mismatch. From the moire fringe separation, thick InAs wires are found to be completely relaxed. No defect is observed for thin wires (<4 ML). Strongly polarized photoluminescence (PL) observed for InAs wires confirms the carrier confinement to the quantum wire structures and the strain effect induced by the large lattice mismatch. A considerable energy shift is observed in the excitation intensity dependence of PL, indicating large nonuniformity.
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