Abstract
Stacked GaAs quantum wires (QWRs) are grown on the surfaces with giant steps which are naturally formed on vicinal GaAs(110) substrates by molecular beam epitaxy. Transmission electron microscopy observation clearly shows stacked structures of coherently aligned quantum wires which are induced by GaAs layer thickness modulation at the step edges. Photoluminescence peak shifts with the thickness of the AlGaAs barrier layers are explained as due to the coupling between the QWRs.
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