Abstract
Haldane and Anderson have extended the Anderson model to describe transition-metal impurities in semiconductors. They explain the confinement of multiple charged states within the band gap to be a consequence of the impurity-host hybridization. In this Comment we derive a simple and physically appealing expression for the change in total energy when the impurity occupancy is changed within the Haldane-Anderson framework. This, we believe, renders the hybridization mechanism transparent.
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