Abstract
The present understanding of transition metal impurities (T.M.) in semiconductors is reviewed with special emphasis on the trends in several physical properties. A simple molecular model is introduced whose validity is confirmed by a full selfconsistent tight binding Green's function calculation which itself is confronted to the results of local density calculations. An empirical law relating the crystal-field splitting and ionization energy is justified. The relation existing between T.M. gap level positions and band offsets at semi-conductor heterojunctions is qualitatively and quantitatively analyzed. The trends in the photoionization cross sections along the 3d series are determined. Finally the accuracy of the existing theories is discussed with a particular attention on estimates of multiplet splitting.
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