Abstract
The growth of high-resistivity InP: Fe by LP-MOCVD is studied. The semi-insulating character of Fe-doped InP was found to vanish in contact with a p +-InP:Zn substrate. Ti-doping of InP is proposed as an alternative for the fabrication of semi-insulating material. Secondary ion mass spectroscopy is used to study the incorporation behavior of titanium in LP-MOCVD grown InP as a function of growth parameters. The optimum growth conditions to achieve abrupt titanium doping profiles are presented. In addition, first results on doping of InP with a 4d transition metal impurity are reported. The MOCVD growth of Zr-doped InP has been carried out using dimethylzircocene as organometallic source material.
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