Abstract
Abstract Growth of InP by metalorganic chemical vapor deposition (MOCVD) has been studied using the adduct Me 3In·PMe 3 as the In source. The optimum growth temperature was found to be in the range of 600–650°C giving growth rates of ∼ 6 μm h −1 Background carrier concentrations of n= (1−2)x10 15 cm −3 were obtained routinely. The effects of growth temperature, substrate preparation and V/III ratio on surface morphology are discussed. The first report of the MOCVD growth of semi-insulating InP is presented. This has been accomplished by means of Fe-doping, using ferrocene as the dopant source. Resistivities as high as 2×10 8 ω cm have been measured.
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