Abstract
Bit failure events induced by random telegraph noise (RTN) for silicon-on-thin-buried-oxide (SOTB) static random access memory (SRAM) cells were characterized by directly monitoring the storage node voltage of individual cells, using a device-matrix-array (DMA) test element group (TEG). Correlating the cell-level RTN and failure waveforms with the RTN waveforms of individual transistors that constitute the same cell, RTN of a specific transistor that causes the cell failure was identified.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
