Abstract
Data are presented demonstrating continuous wave laser operation at −185°C of an InP–InAlGaAs–InAlAs double heterojunction bipolar transistor with strained InGaAs quantum wells incorporated in the p-type base region. The laser exhibits a peak wavelength λ∼1544nm when biased in the forward active mode in the common-emitter configuration. A threshold current IB=10mA is observed.
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