Abstract
This article describes and analyses the fast transient processes that can occur during a local non-destructive breakdown in a circuit consisting of a serial connection of reverse biased high-voltage silicon diodes. Measurements of the reverse current–voltage characteristics of the individual diodes showed that a breakdown had occurred. However, this phenomenon is very difficult to study when there are many diodes connected in series in a stack. A physical model was therefore created to show the individual local breakdown in this case. The validity of the model was verified by means of circuit simulation of the process under investigation. The statistical significance of the process was considered with respect to the reliability and lifetime of a high-voltage diode stack.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.