Abstract
Additional terms have to be added to the right-hand sides of the carrier balance equations for electrons and holes in order to describe the initial injection of charge caused by the loss of kinetic energy of a single ion penetrating a semiconductor device. Two-dimensional simulations of a reverse biased power diode yield the temporal and spatial distribution of the device-internal electric field initiated by an intruding ion. For small reverse biases the charge generated within the device corresponds to the total absorption of the ion’s kinetic energy. Applying a sufficiently high reverse bias a steep field peak forms which is able to propagate through the whole device with an undiminished peak height. Due to the corresponding strong avalanche multiplication a large amount of additional charge can be generated. The results obtained from our device simulations conform well to recent experimental findingsKeywordsReverse BiasField PeakAvalanche GenerationOnset VoltageElectric Field PeakThese keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.
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