Transient development of negative absolute minority electron mobility in a GaAsAlGaAs quantum well

Abstract

We analyze the time dependent transient current response for a coupled electron-hole system in a GaAsAlGaAs quantum well. In this, we take account of the electron-hole interaction, electron-phonon and hole-phonon interactions as well as treating impurity scattering effects. Furthermore, the electron-electron and hole-hole Coulomb repulsions and associated dynamic screening effects are also incorporated. We examine the electron and hole mobilities in the ballistic regime, followed by their overshoot phenomena and finally saturation. Special attention is given to electron-hole drag which slows down the minority electrons, and at low temperature we trace out in detail the time development of negative absolute minority electron mobility for this system.