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Abstract
We have confined excitons to wires within continuous GaAsAlGaAs quantum wells. The confinement is produced by inhomogeneous strain created by patterning and etching a compressively stressed overlayer of amorphous carbon. Potential wells for excitons beneath 400 nm wide wires are 31 meV, as measured by the red-shift of the exciton emission. We compare our results to expectations based upon finite-element calculations of the strain tensor, and discuss the complicated effect of the inhomogeneous strain on valence-band structure.
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