Abstract
The binding energy of excitons in GaAsAlGaAs quantum wells is studied theoretically as a function of the crystallographic growth direction. The electronic dispersion is obtained using the 4×4 Luttinger Hamiltonian for the valence bands, and an accurate expression for the conduction band dispersion which includes the effects of non-parabolicity and warping to fourth order in k. The exciton binding energies are obtained for six growth directions. The different subband mixing for each orientation is seen to strongly influence the exciton properties. The coupling of different exciton states is also dependent on the subband order and energy level spacing, which differ from each quantum well orientation.
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