Abstract
The foreseen high fluence environment in future nuclear and particle physics experiments requires corresponding radiation hard silicon sensors. However, these sensors must be tested for their charge collection performance and long-term radiation sustainability prior to their usage. The Transient Current Technique (TCT) is a useful characterization technique for investigating the radiation damage effects. This work reports measurements on silicon pad detectors carried out using the TCT setup installed at the University of Delhi. Measurement results are complemented with TCAD simulation, which is useful to get an insight of the silicon detector.
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