Abstract
A silicon wafer bonding technique has been recently proposed for the fabrication of monolithic silicon radiation detectors. This new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer. Therefore, monolithic silicon detectors could be fabricated in this way which would allow the free choice of electronic chips and high resistive silicon bulk, even from different providers. Moreover, a monolithic detector with a high resistive bulk would also be available. Electrical properties of the bonded interface are then critical for this application. Indeed, mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface to be collected by the read-out electronics. In order to characterize this interface, the concept of Transient Current Technique (TCT) has been explored by means of numerical simulations combined with a physics based analytical model. In this work, the analytical model giving insight into the physics behind the TCT dependence upon interface traps is validated using both TCAD simulations and experimental measurements.
Published Version
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