Characterization of a Depleted Monolithic Active Pixel Sensor (DMAPS) prototype

Abstract

New monolithic pixel detectors integrating CMOS electronics and sensor on the same silicon substrate are currently explored for particle tracking in future HEP experiments, most notably at the LHC . The innovative concept of Depleted Monolithic Active Pixel Sensors (DMAPS) is based on high resistive silicon bulk material enabling full substrate depletion and the application of an electrical drift field for fast charge collection, while retaining full CMOS capability for the electronics. The technology (150 nm) used offers quadruple wells and allows to implement the pixel electronics with independently isolated N- and PMOS transistors. Results of initial studies on the charge collection and sensor performance are presented.