Depleted Monolithic Active Pixel Sensors in the LFoundry 150 nm and TowerJazz 180 nm CMOS Technologies

Abstract

The monolithic CMOS pixel sensor for charged particle tracking has already become a mainstream technology in high energy particle physics (HEP) experiments. During the last decade, progressive improvements have been made for CMOS pixels to deal with the high-radiation and high-rate environments expected, for example, at the future High Luminosity LHC. One of the key ingredients of these improvements is to achieve a fully depleted sensitive layer, where the charge collection is guided by strong drift field lines. CMOS sensors incorporating such charge collection property, often referred to as DMAPS (Depleted Monolithic Active Pixel Sensor), have been recently demonstrated in several large-scale monolithic prototypes with integrated fast readout architectures. This contribution summarizes the recent progress made on the large-scale DMPAS development, focusing on two demonstrator chips designed in the LFoundry 150 nm and the TowerJazz 150 nm CMOS processes, namely LF-Monopix1 and TJ-Monopix1.