Cross-talk of a large-scale depleted monolithic active pixel sensor (DMAPS) in 180 nm CMOS technology

Abstract

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting from the advances in commercial CMOS processes towards large biasing voltage capabilities and the increasing availability of high-resistivity substrates, depleted monolithic active pixel sensors (DMAPS) can cope with the high-rate and high-radiation environments faced in modern high-energy physics experiments. TJ-Monopix2 is the latest iteration of a DMAPS development line designed in 180nm TowerSemicondutor technology, which features a large scale (2 × 2)cm2 chip divided into (512 × 512)pixels with a pitch of (33 × 33)µm2. All in-pixel electronics are separated from its small collection electrode and process modifications are implemented to improve charge collection efficiency especially after irradiation. The latest laboratory measurements and investigations of a periodic variation in the threshold response relative to the hit arrival time observed for TJ-Monopix2 in typical operating conditions are presented.