Abstract
We have investigated the suitability of organic-on-inorganic (OI) semiconductor contact barrier diodes for use in deep level transient spectroscopy (DLTS) of III-V semiconductors. The diodes are formed by vacuum deposition of a thin film of an organic molecular solid onto semiconductor samples as has been previously reported. DLTS measurements performed on n-type GaAs using conventional Au Schottky barriers have been compared with those using OI diodes DLTS measurements have also been made on as-grown p-type GaAs and n-type InP (upon which high quality conventional Schottky barriers cannot readily be fabricated) using OI diodes. OI devices can be made upon many semiconductors for which conventional Schottky barriers cannot be fabricated, require no sample heating, and can be easily removed without detrimental effects to the inorganic semiconductor material.
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